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TGA2501-GSG 2.8 watt 6-18 ghz power amplifier preliminary data sheet: 8/28/2012 - 1 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ?? frequency range: 6 - 18 ghz ?? saturated output power: 34.5 dbm ?? small signal gain: 26 db ?? bias: vd = 8 v, idq = 1.2 a, vg = -0.6 v typical the triquint TGA2501-GSG provides 26 db of small signal gain and 2.8 w of output power across 6-18 ghz. the TGA2501-GSG is designed using triquint?s proven standard 0.25 m gate phemt production process. the TGA2501-GSG features low loss ground- signal-ground (gsg) rf transitions designed to interface with a coplanar waveguide multilayer board. fully matched to 50 ohms and with integrated dc blocking capacitors on both i/o ports, the tga2501 -gsg is ideally suited to support both commercial and defense related applications lead-free and rohs compliant. applications product features general description functional block diagram pin configuration ordering information part no. description TGA2501-GSG x-, ku-band power amplifier eccn 3a001.b.2.c ?? x- and ku-band point-to-point radio ?? eccm pin # symbol 1,7,8,14 vd 2 vg 3,5,10,12 gnd 4 rf in 6,9,13 n/c 11 rf out 1 2 3 4 5 6 7 8 9 10 11 12 13 14
TGA2501-GSG 2.8 watt 6-18 ghz power amplifier preliminary data sheet: 8/28/2012 - 2 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? absolute maximum ratings parameter rating drain voltage,vd 9 v gate voltage,vg -5 to 0 v drain current, id 2 a gate current range, ig -18 to 18 ma rf input power, cw, 50 ? ,t = 25oc 18 dbm channel temperature, tch 200 o c mounting temperature (30 seconds) 260 o c storage temperature -40 to 150 o c operation of this device out side the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter min typ max units vd 8 v idq (no rf drive) 1.2 a id_drive (under rf drive) 1.5 a vg -0.6 v electrical specifications ar e measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions electrical specifications parameter min typ max units operational frequency range 6 18 ghz small signal gain 26 db output power @ saturation 34.5 dbm power-added efficiency @ saturation 23 % power temperature coefficient -0.01 db/c specifications test conditions unless otherwise noted: 25oc, vd = 8 v, idq = 1.2 a, vg = -0.6 v, cw, typical
TGA2501-GSG 2.8 watt 6-18 ghz power amplifier preliminary data sheet: 8/28/2012 - 3 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? thermal and reliability information parameter condition rating channel temperature (tch), median lifetime (tm), thermal resistance*, no rf drive tbase = 85 c, vd = 8v, idq = 0.8 a, pdiss = 6.4 w , cw tch = 148 c tm = 1.0e+6 hours jc = 9.8 c/w channel temperature (tch), median lifetime (tm), thermal resistance*, under rf drive tbase = 85 c, vd = 8v, id = 1.4 a, pout = 34.5 dbm, pdiss = 8.4 w, cw tch = 167 c tm = 2.7e+5 hours jc = 9.8 c/w specifications (cont?d) * thermal resistance, jc, measured to center bottom of package
TGA2501-GSG 2.8 watt 6-18 ghz power amplifier preliminary data sheet: 8/28/2012 - 4 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance -30 -25 -20 -15 -10 -5 0 6 8 10 12 14 16 18 irl and orl (db) frequency (ghz) return loss vs. frequency vd=8v, idq=1.2a, vg=-0.6v, t=25 o c, cw irl orl 30 32 34 36 38 40 6 8 10 12 14 16 18 saturated output power (dbm) frequency (ghz) saturated output power vs. frequency vd=8v, idq=1.2a, vg=-0.6v, pin=15dbm,cw -40 o c 25 o c 85 o c 15 20 25 30 35 40 6 8 10 12 14 16 18 power-added efficiency (%) frequency (ghz) power-added efficiency vs. frequency vd=8v, idq=1.2a, vg=-0.6v, pin=15dbm, cw -40 o c 25 o c 85 o c 0 5 10 15 20 25 30 35 6 8 10 12 14 16 18 gain (db) frequency (ghz) gain vs. frequency vd=8v, idq=1.2a, vg=-0.6v, pin=0dbm, 25 o c, cw
TGA2501-GSG 2.8 watt 6-18 ghz power amplifier preliminary data sheet: 8/28/2012 - 5 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance 0.0 0.5 1.0 1.5 2.0 2.5 15 20 25 30 35 40 0 5 10 15 output power (dbm) and gain (db) input power (dbm) output power, id, gain vs. input power vd=8v, idq=1.2a, vg=-0.6v, 18ghz, t=25 o c, cw output power gain id id (a) 0.0 0.5 1.0 1.5 2.0 2.5 15 20 25 30 35 40 0 5 10 15 output power (dbm) and gain (db) input power (dbm) output power, id, gain vs. input power vd=8v, idq=1.2a, vg=-0.6v, 6 ghz, t=25 o c, cw output power gain id id (a) 0.0 0.5 1.0 1.5 2.0 2.5 15 20 25 30 35 40 051015 output power (dbm) and gain (db) input power (dbm) output power, id, gain vs. input power vd=8v, idq=1.2a, vg=-0.6v, 12ghz, t=25 o c, cw output power gain id id (a)
TGA2501-GSG 2.8 watt 6-18 ghz power amplifier preliminary data sheet: 8/28/2012 - 6 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? bias-up procedure bias-down procedure turn vg to ?2 v turn off rf signal turn vd to 8 v reduce vg to ?2 v. ensure id ~ 0 ma adjust vg more positive until quiescent id is 1.2 a. this will be vg ~ -0.6 v typical turn vd to 0 v apply rf signal turn vg to 0 v application circuit
TGA2501-GSG 2.8 watt 6-18 ghz power amplifier preliminary data sheet: 8/28/2012 - 7 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? pin # symbol description 1,7,8,14 vd drain voltage. bias network is required; all drain voltage pins must be con- nected and biased 2 vg gate voltage. bias network is required 3,5,10,12 gnd connect to ground 4 rf in input, matched to 50 ? 6,9,13 n/c no internal connection; may be left open 11 rf out output, matched to 50 ? pin description note: see application circuit on page 6 as an example
TGA2501-GSG 2.8 watt 6-18 ghz power amplifier preliminary data sheet: 8/28/2012 - 8 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? bill of material ref des value description manufacturer part number c1-c4,c9 1 uf cap, 1206, 50v, 10%, xr7 panasonic ecj-3yx1h105k c5-c8,c10 1000 pf cap, 0603, 50v, 10%, xr7 panasonic ecj-zeb1h102k w1 jumper, 20 gauge wire various r1 15 ? res, 1206 vishay/dale crcw120615r0fkea evaluation board layout c1 c2 c4 c3 c7 c8 c5 c6 w1 r1 c9 gnd vg vd gnd c10
TGA2501-GSG 2.8 watt 6-18 ghz power amplifier preliminary data sheet: 8/28/2012 - 9 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? mechanical information unit: millimeters part marking: yy assembly lot start year ww assembly lot start week zzz part serial number 11.379 2.946 4.216 4.724 5.994 7.264 8.534 9.296 11.074 12.344 17.323 3.175 10x 0.203 2.565 0.635 1.067 1.943 0.254 x10 0.762 x4 2.997 pin #1 indicators 1.600 x4 1.346 x4 90.0 x10
TGA2501-GSG 2.8 watt 6-18 ghz power amplifier preliminary data sheet: 8/28/2012 - 10 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? esd information esd rating: tbd value: passes > tbd v min. test: human body model (hbm) standard: jedec standard jesd22-a114 eccn us department of commerce: 3a001.b.2.c solderability this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain haz- ardous substances in electrical and electronic equipment). this product also has the following attributes: ?? lead free ?? halogen free (chlorine, bromine) ?? antimony free ?? tbbp-a (c 15 h 12 br 4 0 2 ) free ?? pfos free 1. clean the board or module with alcohol. allow it to fully dry 2. nylock screws are recommended for mounting the TGA2501-GSG to the board 3. to improve the thermal and rf performance, we recommend a heat sink attached to the bottom of the board and/or apply thermal compound to the bottom of the TGA2501-GSG 4. apply solder to each pin of the TGA2501-GSG. 5. clean the assembly with alcohol. product compliance information assembly notes
TGA2501-GSG 2.8 watt 6-18 ghz power amplifier preliminary data sheet: 8/28/2012 - 11 of 11 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? contact information for the latest specifications, additional product informati on, worldwide sales and distribution locations, and infor- mation about triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-products@tqs.com fax: +1.972.994.8504 for technical questions and application information: important notice the information contained herein is believed to be reliabl e. triquint makes no warranties regarding the infor- mation contained herein. triquint assumes no responsibilit y or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information con- tained herein. the information contained herein is provided "as is, where is" and with all faults, and the en- tire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such informat ion does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in m edical, life-saving, or life- sustaining applications, or other applications where a failure would reasonably be expected to cause severe per- sonal injury or death.

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